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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/4461

Title: Spectroscopy of silicon dioxide films grown under negative corona stress
Authors: PRASAD, I
CHANDORKAR, AN
Keywords: sio2-films
discharge
relaxation
deposition
oxidation
sio2
Issue Date: 2003
Publisher: AMER INST PHYSICS
Citation: JOURNAL OF APPLIED PHYSICS, 94(4), 2308-2310
Abstract: Silicon dioxide films were grown in oxygen ambient under negative corona stress at low temperatures (400-450 degreesC). Fourier transform infrared spectra of these films show a peak at 935 cm(-1) along with the conventional transverse optic mode peaks around 1074, 800, and 456 cm(-1). A broad shoulder at 1150 cm(-1) was also observed. The extra peak is attributed to the presence of SiO42- ions and could be the outcome of incomplete oxidation at the surface. The films indicated properties similar to a fully relaxed thermally grown silicon dioxide film with a contradictory nature. The results of these experiments can be comprehensively explained only by assuming the presence of some mixed phase of SiO2. (C) 2003
URI: http://dx.doi.org/10.1063/1.1593222
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4461
http://hdl.handle.net/10054/4461
ISSN: 0021-8979
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