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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/4447

Title: SEMINUMERICAL SIMULATION OF DISPERSIVE TRANSPORT IN THE OXIDE OF METAL-OXIDE-SEMICONDUCTOR DEVICES
Authors: LATHI, S
DAS, A
Keywords: interface trap formation
silicon dioxide
radiation
solids
Issue Date: 1995
Publisher: AMER INST PHYSICS
Citation: JOURNAL OF APPLIED PHYSICS, 77(8), 3864-3867
URI: http://dx.doi.org/10.1063/1.358564
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4447
http://hdl.handle.net/10054/4447
ISSN: 0021-8979
Appears in Collections:Article

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