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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/4434

Title: RADIATION-INDUCED INTERFACE-STATE GENERATION IN REOXIDIZED NITRIDED SIO2
Authors: RAO, VR
VASI, J
Keywords: charge-trapping properties
silicon dioxide
gate dielectrics
oxides
nitridation
kinetics
Issue Date: 1992
Publisher: AMER INST PHYSICS
Citation: JOURNAL OF APPLIED PHYSICS, 71(2), 1029-1031
Abstract: Reoxidized nitrided oxide is compared with nitrided oxides and dry SiO2 for radiation-induced interface-state generation (DELTA-D(itm)) and midgap voltage shifts (DELTA-V(mg)). The suppression of DELTA-D(itm) observed with heavy nitridation or reoxidation is explained in terms of the trapped-hole recombination model together with the shifting of the location of the trapped positive charge away from the Si interface. This model can also explain the effect of nitrogen annealing on nitrided oxides.
URI: http://dx.doi.org/10.1063/1.350390
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4434
http://hdl.handle.net/10054/4434
ISSN: 0021-8979
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