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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/4427

Title: PROCESS DEPENDENCE OF BREAKDOWN FIELD IN THERMALLY NITRIDED SILICON DIOXIDE
Authors: RAMESH, K
CHANDORKAR, AN
VASI, J
Keywords: dielectric-breakdown
sio2-films
films
sio2
nitridation
nitroxide
gate
Issue Date: 1991
Publisher: AMER INST PHYSICS
Citation: JOURNAL OF APPLIED PHYSICS, 70(4), 2299-2303
Abstract: We have studied the dependence of breakdown field in nitrided oxides on nitridation conditions. Nitridation improves the breakdown field of the oxides. In an attempt to explore the cause of the improved breakdown, the breakdown field was related with electron-trap density and refractive index (which increases with nitrogen concentration in the oxide). Our results suggest that the enhanced breakdown field of nitrided oxides is mainly due to incorporation of nitrogen, which results in structural changes in the nitrided oxide.
URI: http://dx.doi.org/10.1063/1.349423
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4427
http://hdl.handle.net/10054/4427
ISSN: 0021-8979
Appears in Collections:Article

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