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|Title: ||Nanocrystalline gallium nitride thin films|
|Authors: ||PRESCHILLA, N|
|Keywords: ||gan quantum dots|
|Issue Date: ||2000|
|Publisher: ||AMER INST PHYSICS|
|Citation: ||APPLIED PHYSICS LETTERS, 77(12), 1861-1863|
|Abstract: ||Nanocrystalline gallium nitride (GaN) thin films were deposited on quartz substrates by reactive rf sputtering of GaAs target with nitrogen as the reactive cum sputtering gas. X-ray diffraction and transmission electron microscopy confirmed the presence of GaN crystallites with particle size increasing from 3 to 16 nm, as the substrate temperature was increased from 400 to 550 degrees C. The particle size in films grown at temperatures below 550 degrees C were less than the exciton Bohr radius of GaN. The band gap of these films obtained from absorption and photoluminescence measurements showed a blueshift with respect to bulk GaN. (C) 2000 [S0003-6951(00)03138-7].|
|Appears in Collections:||Article|
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