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|Title: ||LARGE CRITICAL CURRENTS AND IMPROVED EPITAXY OF LASER-ABLATED AG-DOPED YBA2CU3O7-DELTA THIN-FILMS|
|Authors: ||KUMAR, D|
|Keywords: ||critical current-density|
|Issue Date: ||1993|
|Publisher: ||AMER INST PHYSICS|
|Citation: ||APPLIED PHYSICS LETTERS, 62(26), 3522-3524|
|Abstract: ||Microstructure and critical current densities of laser ablated YBa2Cu3O7-delta thin films doped with 2-20 wt. % Ag have been studied. A critical current density as high as 1.4 X 10(7) A cm-2 at 77 K has been realized on  SrTiO3 substrates with YBaCuO films doped with 5 wt. % Ag which has been found to be the optimum. Evidence indicates that the improved microstructure and epitaxy which is a consequence of grain enlargement and alignment caused by Ag is responsible for the high values of critical currents observed.|
|Appears in Collections:||Article|
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