Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/10054/4356
Title: HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSION
Authors: PATRIKAR, RM
LAL, R
VASI, J
Keywords: Generation
Issue Date: 1993
Publisher: AMER INST PHYSICS
Citation: JOURNAL OF APPLIED PHYSICS, 73(8), 3857-3859
Abstract: Degradation of the gate oxide is often studied by stressing of metal-oxide-semiconductor (MOS) capacitors. Usually the MOS capacitor is stressed in accumulation to avoid the complications due to a voltage drop across the depletion layer if stressed in inversion. High field stressing studies for MOS capacitors with the silicon in inversion are presented in this article. Our observations show that in this mode, silicon properties (mainly minority 'carrier generation lifetime) play an important role.
URI: http://dx.doi.org/10.1063/1.352896
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4356
http://hdl.handle.net/10054/4356
ISSN: 0021-8979
Appears in Collections:Article

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