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|Title: ||Hexagonal diamond synthesis on h-GaN strained films|
|Authors: ||MISRA, A|
|Issue Date: ||2006|
|Publisher: ||AMER INST PHYSICS|
|Citation: ||APPLIED PHYSICS LETTERS, 89(7), -|
|Abstract: ||Chemical vapor deposited diamond films grown on strained gallium nitride-coated quartz substrate are found to display a dominantly hexagonal diamond phase. The phase identification is done using Raman spectroscopy and orientation imaging microscopy (OIM). The presence of a 1324.4 cm(-1) band in the Raman spectra is attributed to a hexagonal diamond symmetry, but the unambiguous signature of the hexagonal phase is confirmed by OIM. A phase map of the sample clearly shows that 88% of the scanned sample area is hexagonal diamond. (c) 2006|
|Appears in Collections:||Article|
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