Hexagonal diamond synthesis on h-GaN strained films

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/4352

Title:	Hexagonal diamond synthesis on h-GaN strained films
Authors:	MISRA, A TYAGI, PK YADAV, BS RAI, P MISRA, DS PANCHOLI, V SAMAJDAR, ID
Keywords:	x-ray-diffraction raman-spectroscopy phase-transformation graphite carbon temperature stress
Issue Date:	2006
Publisher:	AMER INST PHYSICS
Citation:	APPLIED PHYSICS LETTERS, 89(7), -
Abstract:	Chemical vapor deposited diamond films grown on strained gallium nitride-coated quartz substrate are found to display a dominantly hexagonal diamond phase. The phase identification is done using Raman spectroscopy and orientation imaging microscopy (OIM). The presence of a 1324.4 cm(-1) band in the Raman spectra is attributed to a hexagonal diamond symmetry, but the unambiguous signature of the hexagonal phase is confirmed by OIM. A phase map of the sample clearly shows that 88% of the scanned sample area is hexagonal diamond. (c) 2006
URI:	http://dx.doi.org/10.1063/1.2218043 http://dspace.library.iitb.ac.in/xmlui/handle/10054/4352 http://hdl.handle.net/10054/4352
ISSN:	0003-6951
Appears in Collections:	Article

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