Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/10054/4352
Title: Hexagonal diamond synthesis on h-GaN strained films
Authors: MISRA, A
TYAGI, PK
YADAV, BS
RAI, P
MISRA, DS
PANCHOLI, V
SAMAJDAR, ID
Keywords: X-Ray-Diffraction
Raman-Spectroscopy
Phase-Transformation
Graphite
Carbon
Temperature
Stress
Issue Date: 2006
Publisher: AMER INST PHYSICS
Citation: APPLIED PHYSICS LETTERS, 89(7), -
Abstract: Chemical vapor deposited diamond films grown on strained gallium nitride-coated quartz substrate are found to display a dominantly hexagonal diamond phase. The phase identification is done using Raman spectroscopy and orientation imaging microscopy (OIM). The presence of a 1324.4 cm(-1) band in the Raman spectra is attributed to a hexagonal diamond symmetry, but the unambiguous signature of the hexagonal phase is confirmed by OIM. A phase map of the sample clearly shows that 88% of the scanned sample area is hexagonal diamond. (c) 2006
URI: http://dx.doi.org/10.1063/1.2218043
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4352
http://hdl.handle.net/10054/4352
ISSN: 0003-6951
Appears in Collections:Article

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