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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/4350

Title: Growth and structure of sputtered gallium nitride films
Authors: YADAV, BS
MAJOR, SS
SRINIVASA, RS
Keywords: light-emitting-diodes
gan films
preferred orientation
raman-scattering
optical-properties
gaas1-xnx
surface
gaasn
photoluminescence
semiconductors
Issue Date: 2007
Publisher: AMER INST PHYSICS
Citation: JOURNAL OF APPLIED PHYSICS, 102(7), -
Abstract: GaN films have been deposited by radio frequency sputtering of a GaAs target with pure nitrogen. The growth, composition, and structure of the films deposited on quartz substrates have been studied by x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Films deposited below 300 degrees C are amorphous and As rich. Above 300 degrees C, polycrystalline, hexagonal GaN is formed, along with As rich amorphous phase, which reduces with increasing substrate temperature. At a substrate temperature of 700 degrees C, GaN films, practically free of amorphous phase, and As (< 0.5 at. %) are formed. The preferred orientation depends strongly on the substrate temperature and is controlled by surface diffusion of adatoms during growth stage. Below 500 degrees C, the surface diffusion between planes dominates and results in the (10 (1) over bar1) preferred orientation. Above 500 degrees C, the surface diffusion between grains takes over and results in (0002) preferred orientation. (C) 2007
URI: http://dx.doi.org/10.1063/1.2786100
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4350
http://hdl.handle.net/10054/4350
ISSN: 0021-8979
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