Enhanced J(c) and improved grain-boundary properties in Ag-doped YBa2Cu3O7-delta films

Abstract

A large increase (similar to 8 X) in critical current density, J(c), was achieved for in situ laser ablated YBa2Cu3O7-delta-Ag films. High-resolution Auger electron spectroscopic investigation indicates that the Ag-doped films are stoichiometric with a relatively low grain-boundary extension (8 nm) in contrast to undoped YBa2Cu3O7-delta films (32 nm). Further analysis suggests that the doped film contains a much lower silver content (<0.15 wt %) than in the target material (5 wt %). These observations are in excellent agreement with the temperature dependence of J(c), the room-temperature resistivity, and the surface resistance results. Thus, J(c) enhancement in Ag-doped films can be attributed to their superior properties, viz., improved microstructure characteristics and the reduced resistive grain boundaries. (C) 1997