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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/4327

Title: Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors
Authors: CAHYADI, T
TAN, HS
MHAISALKAR, SG
LEE, PS
BOEY, F
CHEN, ZK
NG, CM
RAO, VR
QI, GJ
Keywords: thin-film transistors
electronics
insulators
transport
devices
resins
Issue Date: 2007
Publisher: AMER INST PHYSICS
Citation: APPLIED PHYSICS LETTERS, 91(24), -
Abstract: The electret induced hysteresis was studied in sol-gel silica films that result in higher drain currents and improved device performance in pentacene field-effect transistors. Vacuum and ambient condition studies of the hysteresis behavior and capacitance-voltage characteristics on single layer and varying thicknesses of bilayer dielectrics confirmed that blocking layers of thermal oxide could effectively eliminate the electret induced hysteresis, and that thin (25 nm) sol-gel silica dielectrics enabled elimination of nanopores thus realizing stable device characteristics under ambient conditions. (c) 2007
URI: http://dx.doi.org/10.1063/1.2821377
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4327
http://hdl.handle.net/10054/4327
ISSN: 0003-6951
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