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|Title:||DISPERSIVE TRANSPORT OF CARRIERS UNDER NONUNIFORM ELECTRIC-FIELD|
|Keywords:||Interface Trap Formation|
|Publisher:||AMER INST PHYSICS|
|Citation:||JOURNAL OF APPLIED PHYSICS, 78(7), 4487-4489|
|Abstract:||We have presented in this paper a semi-numerical simulation of dispersive transport under one-dimensional nonuniform electric field which could be used to study dispersive transport of carriers in the oxide. Our simulation is based on continuous time random walk principles (CTRW). Previous formulations using CTRW were derived under the assumption of uniform electric field. Comparison of our simulation results with the equivalent uniform field case shows that the treatment of nonuniform electric field is necessary to correctly predict events linked to dispersive transport, such as the growth of trapped oxide charge due to hole trapping or interface states due to H+ ions reaching oxide semiconductor interface of metal-oxide-semiconductor devices. (C) 1995|
|Appears in Collections:||Article|
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