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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/4315

Title: DISPERSIVE TRANSPORT OF CARRIERS UNDER NONUNIFORM ELECTRIC-FIELD
Authors: TALWALKAR, N
DAS, A
VASI, J
Keywords: interface trap formation
devices
Issue Date: 1995
Publisher: AMER INST PHYSICS
Citation: JOURNAL OF APPLIED PHYSICS, 78(7), 4487-4489
Abstract: We have presented in this paper a semi-numerical simulation of dispersive transport under one-dimensional nonuniform electric field which could be used to study dispersive transport of carriers in the oxide. Our simulation is based on continuous time random walk principles (CTRW). Previous formulations using CTRW were derived under the assumption of uniform electric field. Comparison of our simulation results with the equivalent uniform field case shows that the treatment of nonuniform electric field is necessary to correctly predict events linked to dispersive transport, such as the growth of trapped oxide charge due to hole trapping or interface states due to H+ ions reaching oxide semiconductor interface of metal-oxide-semiconductor devices. (C) 1995
URI: http://dx.doi.org/10.1063/1.359859
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4315
http://hdl.handle.net/10054/4315
ISSN: 0021-8979
Appears in Collections:Article

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