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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/4286

Title: Bias and temperature dependent charge transport in high mobility cobalt-phthalocyanine thin films
Authors: SAMANTA, S
ASWAL, DK
SINGH, A
DEBNATH, AK
KUMAR, MS
HAYAKAWA, Y
GUPTA, SK
YAKHMI, JV
Keywords: transistors
interface
Issue Date: 2010
Publisher: AMER INST PHYSICS
Citation: APPLIED PHYSICS LETTERS, 96(1), -
Abstract: The temperature dependent current-voltage (J-V) characteristics of highly-oriented cobalt phthalocyanine films (rocking-curve width=0.11 degrees) deposited on (001) LaAlO(3) substrates are investigated. In the temperature range 300-100 K, charge transport is governed by bulk-limited processes with a bias dependent crossover from Ohmic (J similar to V) to trap-free space-charge-limited conduction (J similar to V(2)). The mobility (mu) at 300 K has a value of similar to 7 cm(2) V(-1) s(-1) and obeys Arrhenius-type (ln mu similar to 1/T) behavior. However, at temperatures < 100 K, the charge transport is electrode-limited, which undergoes a bias dependent transition from Schottky (ln J similar to V(1/2)) to multistep-tunneling (conductivity varying exponentially on the inverse of the square-root of electric field).
URI: http://dx.doi.org/10.1063/1.3284652
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4286
http://hdl.handle.net/10054/4286
ISSN: 0003-6951
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