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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/4271

Title: A NUMERICAL-SIMULATION OF HOLE AND ELECTRON TRAPPING DUE TO RADIATION IN SILICON DIOXIDE
Authors: VASUDEVAN, V
VASI, J
Keywords: irradiation
model
Issue Date: 1991
Publisher: AMER INST PHYSICS
Citation: JOURNAL OF APPLIED PHYSICS, 70(8), 4490-4495
Abstract: The one-dimensional Poisson, continuity, and the trap rate equations are solved numerically to study the buildup of charge in silicon dioxide due to radiation. The flat-band voltage shift (DELTA-V(fb)) is obtained as a function of total dose, the oxide thickness, the applied gate voltage, and the centroid of the trap distribution. The effect of including electron traps is studied. The results of the simulation are found to compare well with experimental data.
URI: http://dx.doi.org/10.1063/1.349083
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4271
http://hdl.handle.net/10054/4271
ISSN: 0021-8979
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