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Title: Analysis and design of superjunction power MOSFET: CoolMOS™ for improved on resistance and breakdown voltage using theory of novel voltage sustaining layer
Keywords: Power Mosfet
Semiconductor Device Breakdown
Semiconductor Device Models
Issue Date: 2002
Publisher: IEEE
Citation: Proceedings of the 23rd International Conference on Microelectronics (V 1), Nis, Yugoslavia, 12-15 May 2002, 209-212
Abstract: In this paper, we have observed that the drift layer of conventional power device can be modified to SJ-drift layer for improvement in the breakdown voltage (BV). Doping level of SJ-drift layer increased by one order of magnitude gives at least 5 times improvement in on resistance Ron, without reducing the BV. Further increase in the BV is possible by increasing the thickness of the SJ-drift layer where we observed the proportional increase in Ron. Theory of novel voltage sustaining layer (SJ-theory) recently published is used for the first time to analyze and design CoolMOS structure. We observed that for a fixed cell-pitch, increasing the height of drift layer proportionately increases the BV. The rate of increasing BV is higher for smaller cell-pitch. The Ron also increases proportionally. For a fixed geometry increasing doping level by one order of magnitude reduces the BV and the rate of reduction of this BV is dependent on the cell-pitch.
URI: 10.1109/MIEL.2002.1003176
ISBN: 0-7803-7235-2
Appears in Collections:Proceedings papers

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