Please use this identifier to cite or link to this item:
|Title:||Analysis and design of superjunction power MOSFET: CoolMOS™ for improved on resistance and breakdown voltage using theory of novel voltage sustaining layer|
Semiconductor Device Breakdown
Semiconductor Device Models
|Citation:||Proceedings of the 23rd International Conference on Microelectronics (V 1), Nis, Yugoslavia, 12-15 May 2002, 209-212|
|Abstract:||In this paper, we have observed that the drift layer of conventional power device can be modified to SJ-drift layer for improvement in the breakdown voltage (BV). Doping level of SJ-drift layer increased by one order of magnitude gives at least 5 times improvement in on resistance Ron, without reducing the BV. Further increase in the BV is possible by increasing the thickness of the SJ-drift layer where we observed the proportional increase in Ron. Theory of novel voltage sustaining layer (SJ-theory) recently published is used for the first time to analyze and design CoolMOS structure. We observed that for a fixed cell-pitch, increasing the height of drift layer proportionately increases the BV. The rate of increasing BV is higher for smaller cell-pitch. The Ron also increases proportionally. For a fixed geometry increasing doping level by one order of magnitude reduces the BV and the rate of reduction of this BV is dependent on the cell-pitch.|
|Appears in Collections:||Proceedings papers|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.