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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/3609

Title: DETERMINATION OF THE STOICHIOMETRY OF VANADIUM NITRIDE FILMS BY PROTON BACKSCATTERING
Authors: RAMANA, JV
RAJU, VS
RAY, AK
GANGADHARAN, S
SRINIVASA, RS
CHANDORKAR, AN
Keywords: backscattering
tin
Issue Date: 1993
Publisher: AKADEMIAI KIADO
Citation: JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES, 174(2), 265-270
Abstract: Vanadium nitride films were grown on stainless steel and silicon, with different nitrogen concentrations by varying the partial pressures of nitrogen in a DC magnetron sputtering set-up. These films were characterized for their composition by proton back-scattering and their micro hardness values were correlated with their N/V ratio.
URI: http://dx.doi.org/10.1007/BF02037913
http://dspace.library.iitb.ac.in/xmlui/handle/10054/3609
http://hdl.handle.net/10054/3609
ISSN: 0236-5731
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