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|Title:||DETERMINATION OF THE STOICHIOMETRY OF VANADIUM NITRIDE FILMS BY PROTON BACKSCATTERING|
|Citation:||JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES, 174(2), 265-270|
|Abstract:||Vanadium nitride films were grown on stainless steel and silicon, with different nitrogen concentrations by varying the partial pressures of nitrogen in a DC magnetron sputtering set-up. These films were characterized for their composition by proton back-scattering and their micro hardness values were correlated with their N/V ratio.|
|Appears in Collections:||Article|
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