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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/3598

Title: Investigation of the effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dot heterostructures
Authors: SENGUPTA, S
HALDER, N
CHAKRABARTI, S
HERRERA, M
BONDS, M
BROWNING, ND
Keywords: molecular-beam epitaxy
Issue Date: 2009
Publisher: ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
Citation: SUPERLATTICES AND MICROSTRUCTURES, 46(4), 611-617
Abstract: Effect of growth pause or ripening time on structural and optical properties of self-assembled InAs/GaAs quantum dot (QD) heterostructures grown by solid state molecular beam epitaxy (MBE) technique with two different growth rates of InAs (0.032 MLs(-1) and 0.197 MLs(-1)) has been investigated. The QD heterostructures were grown at 520 degrees C with InAs monolayer coverage of 2.7 ML The results were explained on the basis of high angle annular dark field scanning transmission electron microscope (HAADF-STEM), scanning electron microscope (SEM) and photoluminescence (PL) measurements. Introduction of growth pause leads the QD system towards a thermodynamic equilibrium state which in turn makes interesting changes on the morphology of the samples. Coagulation of some smaller dots occurs because of ripening to produce evolved QDs and the dot density reduces with growth pause. (C) 2009
URI: http://dx.doi.org/10.1016/j.spmi.2009.06.002
http://dspace.library.iitb.ac.in/xmlui/handle/10054/3598
http://hdl.handle.net/10054/3598
ISSN: 0749-6036
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