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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/3352

Title: Change in the microstructure at W/Si interface and surface by swift heavy ions
Authors: AGARWAL, G
KULSHRESTHA, V
SHARMA, P
JAIN, IP
Keywords: irradiation
films
multilayers
silicon
Issue Date: 2010
Publisher: ACADEMIC PRESS INC ELSEVIER SCIENCE
Citation: JOURNAL OF COLLOID AND INTERFACE SCIENCE, 351(2), 570-575
Abstract: Metal/Si thin film interfaces and surfaces can be modified by swift heavy ions (SHI) in a controlled manner. The mixing induced by 120 MeV Au(+9) ions at W/Si interface are presented in the manuscript. Grazing Incident X-ray Diffraction (GIXRD) result shows the formation of two type of tungsten silicides t-W(5)Si(3) along with t-WSi(2) by atomic mixing at the interface on increasing the ion fluence. The diffusivity value calculated from the Rutherford Backscattering Spectroscopy (RBS) measurements, suggest a transient molten phase at the interface causing the atomic mixing following by Thermal spike model. Atomic Force Microscopy (AFM) results revealed increase in surface roughness and grain size formation, which increases with ion fluence showing the irradiation effect at the surface also.
URI: http://dx.doi.org/10.1016/j.jcis.2010.07.055
http://dspace.library.iitb.ac.in/xmlui/handle/10054/3352
http://hdl.handle.net/10054/3352
ISSN: 0021-9797
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