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| Title: | Mechanism of negative bias temperature instability in CMOS devices: degradation, recovery and impact of nitrogen |
| Authors: | MAHAPATRA, S
BHARATH KUMAR, P
DALEI, TR
SANA, D
ALAM, MA |
| Keywords: | cmos integrated circuit
electron traps
integrated circuit reliability
interface phenomena
nitridation |
| Issue Date: | 2004 |
| Publisher: | IEEE |
| Citation: | Proceedings of the IEEE International Electron Devices Meeting Technical Digest, San Francisco, USA, 13-15 December 2004, 105-108. |
| Abstract: | NBTI mechanism is discussed for a wide range of stress conditions. Conditions for interface and bulk-trap generation are shown. The bias, time and temperature dependence of interface-trap buildup and recovery are discussed using the framework of the R-D model. The AC frequency dependence and impact of gate oxide nitridation are also discussed. |
| URI: | 10.1109/IEDM.2004.1419079
http://hdl.handle.net/10054/334
http://dspace.library.iitb.ac.in/xmlui/handle/10054/334 |
| ISBN: | 0-7803-8684-1 |
| Appears in Collections: | Proceedings papers
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