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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/334

Title: Mechanism of negative bias temperature instability in CMOS devices: degradation, recovery and impact of nitrogen
Authors: MAHAPATRA, S
BHARATH KUMAR, P
DALEI, TR
SANA, D
ALAM, MA
Keywords: cmos integrated circuit
electron traps
integrated circuit reliability
interface phenomena
nitridation
Issue Date: 2004
Publisher: IEEE
Citation: Proceedings of the IEEE International Electron Devices Meeting Technical Digest, San Francisco, USA, 13-15 December 2004, 105-108.
Abstract: NBTI mechanism is discussed for a wide range of stress conditions. Conditions for interface and bulk-trap generation are shown. The bias, time and temperature dependence of interface-trap buildup and recovery are discussed using the framework of the R-D model. The AC frequency dependence and impact of gate oxide nitridation are also discussed.
URI: 10.1109/IEDM.2004.1419079
http://hdl.handle.net/10054/334
http://dspace.library.iitb.ac.in/xmlui/handle/10054/334
ISBN: 0-7803-8684-1
Appears in Collections:Proceedings papers

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