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|Title: ||Hot-wire chemical-vapor-deposited nanometer range a-SiC : H diffusion barrier films for ultralarge-scale-integrated application|
|Authors: ||SINGH, SK|
|Keywords: ||hydrogen silsesquioxane|
|Issue Date: ||2006|
|Publisher: ||A V S AMER INST PHYSICS|
|Citation: ||JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 24(2), 543-546|
|Abstract: ||Hydrogenated amorphous silicon-carbon alloy thin films (alpha-SiC:H) deposited from C2H2 and SiH4 by the hot-wire chemical-vapor deposition (HWCVD) technique on low-k hydrogen silsesquioxane (HSQ) layers show effective barrier properties against Cu diffusion. These a-SiC:H films with different thicknesses were deposited on HSQ films and the leakage current in a metal-insulator-semiconductor device structure such as Cu/a-SiC:H/HSQ/Si/Al was determined. It was observed that HWCVD a-SiC: H acts as a very efficient diffusion barrier layer on HSQ with an effective dielectric constant of the combined stack much lower than that of SiO2. Secondary-ion-mass spectroscopy analysis indicates that an a-SiC: H film of less than 10 nm would provide the desired barrier effect.|
|Appears in Collections:||Article|
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