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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/3313

Title: Hot-wire chemical-vapor-deposited nanometer range a-SiC : H diffusion barrier films for ultralarge-scale-integrated application
Authors: SINGH, SK
KUMBHAR, AA
DUSANE, RO
BOCK, W
Keywords: hydrogen silsesquioxane
electromigration
Issue Date: 2006
Publisher: A V S AMER INST PHYSICS
Citation: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 24(2), 543-546
Abstract: Hydrogenated amorphous silicon-carbon alloy thin films (alpha-SiC:H) deposited from C2H2 and SiH4 by the hot-wire chemical-vapor deposition (HWCVD) technique on low-k hydrogen silsesquioxane (HSQ) layers show effective barrier properties against Cu diffusion. These a-SiC:H films with different thicknesses were deposited on HSQ films and the leakage current in a metal-insulator-semiconductor device structure such as Cu/a-SiC:H/HSQ/Si/Al was determined. It was observed that HWCVD a-SiC: H acts as a very efficient diffusion barrier layer on HSQ with an effective dielectric constant of the combined stack much lower than that of SiO2. Secondary-ion-mass spectroscopy analysis indicates that an a-SiC: H film of less than 10 nm would provide the desired barrier effect.
URI: http://dx.doi.org/10.1116/1.2166862
http://dspace.library.iitb.ac.in/xmlui/handle/10054/3313
http://hdl.handle.net/10054/3313
ISSN: 1071-1023
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