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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/331

Title: A new observation of enhanced bias temperature instability in thin gate oxide p-MOSFETs
Authors: MAHAPATRA, S
BHARATH KUMAR, P
ALAM, MA
Keywords: mosfet
diffusion
hydrogen
interface states
semiconductor device models
thermal stability
Issue Date: 2003
Publisher: IEEE
Citation: Proceeding of the IEEE International Electron Devices Meeting Technical Digest, Washington DC, USA, 8-10 December 2003, 14.2.1-14.2.4.
Abstract: Bias temperature instability (BTI) and its underlying physical mechanism are studied for thin gate oxide MOSFETs. For p-MOSFETs stressed in inversion for a long-time, BTI increase is observed at high stress temperature. This is shown to be due to higher interface trap generation because of faster hydrogen diffusion in the gate poly. Enhanced BTI affects device lifetime and is strongly influenced by gate oxide scaling, as discussed.
URI: 10.1109/IEDM.2003.1269293
http://hdl.handle.net/10054/331
http://dspace.library.iitb.ac.in/xmlui/handle/10054/331
ISBN: 0-7803-7872-5
Appears in Collections:Proceedings papers

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