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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/324

Title: Endurance and retention characteristics of SONOS EEPROMs operated using BTBT induced hot hole erase
Authors: BHARATH KUMAR, P
MURAKAMI, E
KAMOHARA, S
MAHAPATRA, S
Keywords: hot electrons
optimization
electron tunneling
Issue Date: 2006
Publisher: IEEE
Citation: Proceedings of the IEEE International Reliability Physics Symposium, San Jose, USA, March 2006, 699-700.
Abstract: Endurance and retention of SONOS EEPROMs operated using channel hot electron injection (CHEI) and band-to-band tunneling (BTBT) induced hot hole injection (HHI) are studied. Cycling window closure is improved by optimizing erase bias, and its effect on cell degradation is studied. The retention loss in program state is studied under different erase conditions and correlated to cell degradation caused by HHI.
URI: 10.1109/RELPHY.2006.251331
http://hdl.handle.net/10054/324
http://dspace.library.iitb.ac.in/xmlui/handle/10054/324
ISBN: 0-7803-9499-2
Appears in Collections:Proceedings papers

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