Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/10054/320
Title: Performance and reliability of high density flash EEPROMs under CHISEL programming operation
Authors: MAHAPATRA, S
SHUKURI, S
BUDE, JD
Keywords: Flash Memories
Integrated Circuit Reliability
Integrated Memory Circuits
Integrated Circuit Design
Issue Date: 2002
Publisher: IEEE
Citation: Proceeding of the 32nd European Solid-State Device Research Conference, Scotland, UK, 24-26 September 2002, 351-354.
Abstract: We demonstrate CHISEL programming operation of fully scaled high-density flash EEPROMs. Single cell program and erase characteristics show reliable. operation in terms of programming disturbs and cycling induced degradation. Program and erase operation of high-density arrays show a unique post-erase operation, tight threshold voltage distribution and over 10 years of data retention even after 105 program/erase cycles. Results are presented showing the feasibility of CHISEL programming operation for deeply scaled high-density flash EEPROMs.
URI: http://hdl.handle.net/10054/320
http://dspace.library.iitb.ac.in/xmlui/handle/10054/320
ISBN: 88-900847-8-2
Appears in Collections:Proceedings papers

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