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|Title:||Neutron induced oxide degradation in MOSFET structures|
|Citation:||Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, 7-11 July 2003, 151-155|
|Abstract:||In this paper, we have measured the intensity of gamma radiation accompanying neutrons at different neutron fluences at the irradiation position. MOS samples were subjected to neutron radiation in a swimming pool type of reactor and other samples from the same batch were exposed to an equivalent dose of accompanying gamma radiation using Co60 gamma source. The difference in the damage caused by the neutrons. While executing this approach, major issues considered were, calibration of gamma radiation accompanying neutrons, consideration of energy spectrums of Co60 and accompanying gamma, measurement of thermal and fast neutron flux at the irradiation position of the reactor and measurement of flux at the different power levels.|
|Appears in Collections:||Proceedings papers|
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