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Title: Physical mechanisms for pulsed AC stress degradation in thin gate oxide MOSFETs
Keywords: Mosfet
Dielectric Thin Films
Electron-Hole Recombination
Interface States
Semiconductor Device Reliability
Issue Date: 2002
Publisher: IEEE
Citation: Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, 8-12 July 2002, 250-253
Abstract: An experimental study of the dielectric degradation under different AC stress conditions has been carried out using MOSFETs with 3.9 nm thick gate oxides. Bipolar and unipolar voltage pulses were used to stress the dielectric and interface state generation monitored. Pulse parameters (pulse levels, duty cycle, stress time, rise/fall times, and frequency) were systematically varied to understand the processes responsible for degradation. The experimental results give a good insight into the physical mechanisms responsible for interface degradation in ultra-thin gate oxides. The observations can be explained invoking carrier injection into the oxide followed by trapped-hole.
URI: 10.1109/IPFA.2002.1025673
ISBN: 0-7803-7416-9
Appears in Collections:Proceedings papers

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