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|Title:||Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique|
|Authors:||DUNGA, MOHAN V|
RAMGOPAL RAO, V
|Citation:||Proceedings of the 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, 9-13 July 2001, 254-257|
|Abstract:||In this paper, we present an analysis of floating body effects in lateral asymmetric channel (LAC) and conventional homogeneously doped channel (uniform) SOI MOSFETs using a novel gate-induced-drain-leakage (GIDL) current technique. The parasitic bipolar current gain β has been experimentally measured for LAC and uniform SOI MOSFETs using the GIDL current technique. The lower parasitic bipolar current gain observed in LAC SOI MOSFETs is explained with the help of 2D device simulations.|
|Appears in Collections:||Proceedings papers|
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