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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/310

Title: Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique
Authors: DUNGA, MOHAN V
AATISH KUMAR
RAMGOPAL RAO, V
Keywords: computer simulation
leakage currents
gates (transistor)
thin films
Issue Date: 2001
Publisher: IEEE
Citation: Proceedings of the 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, 9-13 July 2001, 254-257
Abstract: In this paper, we present an analysis of floating body effects in lateral asymmetric channel (LAC) and conventional homogeneously doped channel (uniform) SOI MOSFETs using a novel gate-induced-drain-leakage (GIDL) current technique. The parasitic bipolar current gain β has been experimentally measured for LAC and uniform SOI MOSFETs using the GIDL current technique. The lower parasitic bipolar current gain observed in LAC SOI MOSFETs is explained with the help of 2D device simulations.
URI: 10.1109/IPFA.2001.941497
http://hdl.handle.net/10054/310
http://dspace.library.iitb.ac.in/xmlui/handle/10054/310
ISBN: 0-7803-6675-1
Appears in Collections:Proceedings papers

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