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|Title:||A comprehensive trapped charge profiling technique for SONOS flash EEPROMs|
BHARATH KUMAR, P
|Keywords:||Monte Carlo Methods|
|Citation:||Proceedings of the IEEE International Electron Devices Meeting Technical Digest, Tokyo, Japan, 13-15 December 2004, 403-406|
|Abstract:||Trapped charge profiles under CHE program of SONOS flash cells are uniquely determined and verified using I-V, GIDL and CP measurements and Monte Carlo simulations. The prospect of profiling using I-V measurement alone is discussed. The inaccuracy associated with conventional CP technique is discussed. The correct method of CP simulation for programmed SONOS devices is shown and programming induced interface-trap generation is estimated.|
|Appears in Collections:||Proceedings papers|
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