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| Title: | A comprehensive trapped charge profiling technique for SONOS flash EEPROMs |
| Authors: | NAIR, PR
BHARATH KUMAR, P
SHARMA, RAVINDER
MAHAPATRA, S
KAMOHARA, S |
| Keywords: | monte carlo methods
computer simulation
flash memory
threshold voltage |
| Issue Date: | 2004 |
| Publisher: | IEEE |
| Citation: | Proceedings of the IEEE International Electron Devices Meeting Technical Digest, Tokyo, Japan, 13-15 December 2004, 403-406 |
| Abstract: | Trapped charge profiles under CHE program of SONOS flash cells are uniquely determined and verified using I-V, GIDL and CP measurements and Monte Carlo simulations. The prospect of profiling using I-V measurement alone is discussed. The inaccuracy associated with conventional CP technique is discussed. The correct method of CP simulation for programmed SONOS devices is shown and programming induced interface-trap generation is estimated. |
| URI: | 10.1109/IEDM.2004.1419170
http://hdl.handle.net/10054/301
http://dspace.library.iitb.ac.in/xmlui/handle/10054/301 |
| ISBN: | 0-7803-8684-1 |
| Appears in Collections: | Proceedings papers
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