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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/291

Title: A new drain voltage enhanced NBTI degradation mechanism
Authors: JHA, NEERAJ K
REDDY, PS
RAMGOPAL RAO, V
Keywords: mosfet
interface states
semiconductor device reliability
thermal stability
Issue Date: 2005
Publisher: IEEE
Citation: Proceedings of the 43rd Annual IEEE International Reliability Physics Symposium, San Jose, USA, 17-21 April 2005, 524-528
Abstract: Interface state generation and threshold voltage degradation for various channel length devices stressed at different drain bias has been studied. It is found that NBTI effect decreases at Low drain bias due to decrease in effective gate bias near the drain edge. The subsequent increase in degradation at higher drain stress bias is due to non-uniform generation of interface states and subsequent diffusion o f generated hydrogen species along the length of the channel. This effect is more pronounced for short channel devices stressed at high temperatures and high drain bias.
URI: http://hdl.handle.net/10054/291
http://dspace.library.iitb.ac.in/xmlui/handle/10054/291
ISBN: 0-7803-8803-8
Appears in Collections:Proceedings papers

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