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| Title: | A predictive reliability model for PMOS bias temperature degradation |
| Authors: | MAHAPATRA, S
ALAM, MA |
| Keywords: | mosfet
semiconductor device models
semiconductor device reliability |
| Issue Date: | 2002 |
| Publisher: | IEEE |
| Citation: | Proceedings of the International Electron Devices Meeting, San Francisco CA, USA, 8-11 December 2002, 505-508 |
| Abstract: | Bias temperature degradation is studied in p-MOSFETs. The physical mechanisms responsible for degradation over a wide range of stress bias and temperature have been identified. A novel scaling methodology is proposed that helps in obtaining a simple, analytical model useful for reliability projection. |
| URI: | 10.1109/IEDM.2002.1175890
http://hdl.handle.net/10054/245
http://dspace.library.iitb.ac.in/xmlui/handle/10054/245 |
| ISBN: | 0-7803-7462-2 |
| Appears in Collections: | Proceedings papers
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