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|Title:||A predictive reliability model for PMOS bias temperature degradation|
Semiconductor Device Models
Semiconductor Device Reliability
|Citation:||Proceedings of the International Electron Devices Meeting, San Francisco CA, USA, 8-11 December 2002, 505-508|
|Abstract:||Bias temperature degradation is studied in p-MOSFETs. The physical mechanisms responsible for degradation over a wide range of stress bias and temperature have been identified. A novel scaling methodology is proposed that helps in obtaining a simple, analytical model useful for reliability projection.|
|Appears in Collections:||Proceedings papers|
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