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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/239

Title: A novel method to obtain 3-port network parameters from 2-port measurements
Authors: JHA, ANURANJAN
VASI, J
RUSTAGI, SC
PATIL, MB
Keywords: mosfet
network analysis
semiconductor device measurement
semiconductor device models
two-port networks
Issue Date: 2004
Publisher: IEEE
Citation: Proceedings of the International Conference on Microelectronic Test Structures (V 17), Japan, 22-25 March 2004, 57-62
Abstract: The two-port description of a four-terminal device like a MOSFFT is incomplete. For complete analysis and at higher frequencies, four terminal characteristics have to be obtained. We describe a simple and novel measurement technique to obtain the complete description from two-port measurements on a single test structure. No extra test structures are needed in this procedure. Such measurements are reported for the first time for a MOSFET.
URI: http://hdl.handle.net/10054/239
http://dspace.library.iitb.ac.in/xmlui/handle/10054/239
ISBN: 0-7803-8262-5
Appears in Collections:Proceedings papers

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