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|Title:||A novel method to obtain 3-port network parameters from 2-port measurements|
Semiconductor Device Measurement
Semiconductor Device Models
|Citation:||Proceedings of the International Conference on Microelectronic Test Structures (V 17), Japan, 22-25 March 2004, 57-62|
|Abstract:||The two-port description of a four-terminal device like a MOSFFT is incomplete. For complete analysis and at higher frequencies, four terminal characteristics have to be obtained. We describe a simple and novel measurement technique to obtain the complete description from two-port measurements on a single test structure. No extra test structures are needed in this procedure. Such measurements are reported for the first time for a MOSFET.|
|Appears in Collections:||Proceedings papers|
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