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| Title: | Mechanism of drain disturb in SONOS flash EEPROMs |
| Authors: | BHARATH KUMAR, P
SHARMA, RAVINDER
NAIR, PR
NAIR, DR
KAMOHARA, S
MAHAPATRA, S
VASI, J |
| Keywords: | electric charge
ionisation
leakage currents
semiconductor junctions
nitrides |
| Issue Date: | 2005 |
| Publisher: | IEEE |
| Citation: | Proceedings of the IEEE 43rd Annual International Reliability Physics Symposium, San Jose, USA, 17-21 April 2005, 186-190 |
| Abstract: | We investigate the mechanism of drain disturb in SONOS flash memory cells. Our results show that drain disturb can be a serious concern in programmed state and is caused by injection of holes from substrate into the nitride. We identify the key factors responsible for this to be band-to-band tunneling at the drain junction and impact ionization of the channel leakage current. |
| URI: | http://hdl.handle.net/10054/232
http://dspace.library.iitb.ac.in/xmlui/handle/10054/232 |
| ISBN: | 0-7803-8803-8 |
| Appears in Collections: | Proceedings papers
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