Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/10054/232
Title: Mechanism of drain disturb in SONOS flash EEPROMs
Authors: BHARATH KUMAR, P
SHARMA, RAVINDER
NAIR, PR
NAIR, DR
KAMOHARA, S
MAHAPATRA, S
VASI, J
Keywords: Electric Charge
Ionisation
Leakage Currents
Semiconductor Junctions
Nitrides
Issue Date: 2005
Publisher: IEEE
Citation: Proceedings of the IEEE 43rd Annual International Reliability Physics Symposium, San Jose, USA, 17-21 April 2005, 186-190
Abstract: We investigate the mechanism of drain disturb in SONOS flash memory cells. Our results show that drain disturb can be a serious concern in programmed state and is caused by injection of holes from substrate into the nitride. We identify the key factors responsible for this to be band-to-band tunneling at the drain junction and impact ionization of the channel leakage current.
URI: http://hdl.handle.net/10054/232
http://dspace.library.iitb.ac.in/xmlui/handle/10054/232
ISBN: 0-7803-8803-8
Appears in Collections:Proceedings papers

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