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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/231

Title: Small signal characteristics of thin film single halo SOI MOSFET for mixed mode applications
Authors: NAJEEB-UD-DIN HAKIM
RAMGOPAL RAO, V
VASI, J
Keywords: mosfet
doping profiles
silicon-on-insulator
semiconductor device models
mixed analogue digital
integrated circuits
Issue Date: 2003
Publisher: IEEE
Citation: Proceedings of the 16th International Conference on VLSI Design, Calcutta, India, 4-8 January 2003, 110-115
Abstract: In this paper, we report a study on the small signal characterization and simulation of single halo (SH) thin film silicon-on-insulators (SOI) nMOSFETs for analog and mixed signal applications. The single halo structure has a high pocket impurity concentration near the source end of the channel and low impurity concentration in the rest of the channel. Besides excellent DC output characteristics, the experimental characterization results of these devices show better Vth-L roll-off, low DIBL, higher breakdown voltages and kink free operation. Small signal characterization of these devices shows higher AC transconductance, higher output resistance and better dynamic intrinsic gain (gmRo) in comparison with the conventional (CON) homogeneously doped SOI MOSFETs. Also, the low drain junction capacitance as a result of low impurity concentration near the drain region is beneficial for improved circuit performance.
URI: 10.1109/ICVD.2003.1183123
http://hdl.handle.net/10054/231
http://dspace.library.iitb.ac.in/xmlui/handle/10054/231
ISBN: 0-7695-1868-0
Appears in Collections:Proceedings papers

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