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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/230

Title: Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs
Authors: NAJEEB-UD-DIN HAKIM
DUNGA, MV
AATISH KUMAR
RAMGOPAL RAO, V
VASI, J
Keywords: mosfet
leakage currents
silicon-on-insulator
Issue Date: 2001
Publisher: IEEE
Citation: Proceedings of the 6th International Conference on Solid-State and Integrated-Circuit Technology (V 1), Shanghai, China, 22-25 October 2001, 655-660
Abstract: This paper presents results on the characterization of Lateral Asymmetric Channel (LAC) thin film silicon-on-insulator (SOI) MOSFETs. These devices are compared with conventional SOI MOSFETs having uniform channel doping. The measurements have been taken for a number of channel lengths, silicon film thicknesses, and tilt angles of implantation. The aspects studied include threshold voltage roll-off, kink effect, gate induced drain leakage (GIDL) and parasitic bipolar transistor action. Measurements have been supplemented by device simulations. The LAC devices show excellent characteristics, with many advantages over the conventional devices.
URI: 10.1109/ICSICT.2001.981564
http://hdl.handle.net/10054/230
http://dspace.library.iitb.ac.in/xmlui/handle/10054/230
ISBN: 0-7803-6520-8
Appears in Collections:Proceedings papers

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