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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/223

Title: 100 nm channel length MNSFETs using a jet vapor deposited ultra-thin silicon nitride gate dielectric
Authors: MAHAPATRA, S
RAMGOPAL RAO, V
MANJULA RANI, KN
PARIKH, CD
VASI, J
CHENG, B
KHARE, M
WOO, JCS
Keywords: misfet
dielectric thin films
hot carriers
interface structure
silicon compounds
vapour deposited coatings
Issue Date: 1999
Publisher: IEEE
Citation: Proceedings of the Symposium on VLSI Technology Digest of Technical Papers, Kyoto, Japan, 14-16 June 1999, 79-80
Abstract: Metal-nitride-semiconductor (MNS) FETs with channel lengths down to 100 nm with a novel jet vapor deposited (JVD) SiN insulator as gate dielectric are fabricated and characterized for their electrical performance. By employing the charge pumping technique, the SiN interface quality and its effect on the transistor performance are evaluated. We show that, compared to conventional SiO2 MOSFETs, the SiN devices show lower gate leakage current, competitive drain current drive and transconductance, good interface quality, and reduced hot-carrier degradation.
URI: 10.1109/VLSIT.1999.799349
http://hdl.handle.net/10054/223
http://dspace.library.iitb.ac.in/xmlui/handle/10054/223
ISBN: 4-930813-93-X
Appears in Collections:Proceedings papers

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