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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/193

Title: Drain current model including velocity saturation for symmetric double-gate MOSFETs
Authors: VENKATNARAYAN, HARIHARAN
VASI, J
RAMGOPAL RAO, V
Keywords: drain current
silicon carbide
nonmetals
technology
Issue Date: 2008
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 55(8), 2173-80
Abstract: A drain current model is developed for a symmetrically driven undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET) under the drift-diffusion transport mechanism, with velocity saturation effects being included as an integral part of the model derivation. Velocity saturation effects are modeled by using the Caughey-Thomas engineering model with exponent n = 2. Id-Vd, Id-Vg, gm -Vg, and gDS-Vd comparisons are made with 2-D device simulation results, and a very good match is found all the way from subthreshold to strong inversion. Gummel symmetry compliance is also shown.
URI: http://dx.doi.org/10.1109/TED.2008.926745
http://hdl.handle.net/10054/193
http://dspace.library.iitb.ac.in/xmlui/handle/10054/193
ISSN: 0018-9383
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