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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/190

Title: Analysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current technique
Authors: RAMGOPAL RAO, V
NAJEEB-UD-DIN HAKIM
DUNGA, MV
AATISH KUMAR
VASI, J
CHENG, B
WOO, JCS
Keywords: mosfet
semiconductor device models
semiconductor process modelling
silicon-on-insulator
Issue Date: 2002
Publisher: IEEE
Citation: Electron Device Letters 23(4), 209-11
Abstract: Using a novel gate-induced-drain-leakage (GIDL) current technique and two-dimensional (2-D) simulations, single pocket (SP) SOI MOSFETs have been shown to exhibit reduced floating body effects compared to the homogeneously-doped channel (conventional) SOI MOSFETs. The GIDL current technique has been used to characterize the parasitic bipolar transistor gain for both conventional and SP-SOI MOSFETs. From 2-D device simulations, the lower floating body effects in SP-SOI MOSFETs are analyzed and compared with the conventional MOSFETs.
URI: http://dx.doi.org/10.1109/55.992841
http://hdl.handle.net/10054/190
http://dspace.library.iitb.ac.in/xmlui/handle/10054/190
ISSN: 0741-3106
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