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|Title:||SEU reliability analysis of advanced deep-submicron transistors|
|Citation:||IEEE Transactions on Device and Materials Reliability 5 (2), 289-95|
|Abstract:||A systematic evaluation of the single-event-upset (SEU) reliability of the advanced technologies-high-κ gate dielectric, elevated source-drain (E-SD), and lateral asymmetric channel (LAC) MOSFETs is presented for the first time in this work. Our simulations results gives a clear view of how the short channel effects in a device governs its SEU reliability and how this reasoning evolves at the circuit level. It is shown that devices with worsened short-channel effects (high-κ gate dielectric transistors) have a significantly reduced SEU-reliability in contrast to the devices with controlled short-channel effects (LAC and E-SD) or even a conventional device.|
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