DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Article >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/183

Title: Superior hot carrier reliability of single halo (SH) silicon-on-insulator (SOI) nMOSFET in analog applications
Authors: VASI, J
NAJEEB-UD-DIN HAKIM
RAMGOPAL RAO, V
WOO, JCS
Keywords: hot carriers
mixed analogue digital integrated circuits
semiconductor doping
semiconductor junctions
silicon
silicon-on-insulator
Issue Date: 2005
Publisher: IEEE
Citation: IEEE Transactions on Device and Materials Reliability 5 (1), 127-32
Abstract: In this paper, for the first time, we report a study on the hot carrier reliability performance of single halo (SH) thin film silicon-on-insulator (SOI) nMOSFETs for analog and mixed-signal applications. The SH structure has a high pocket impurity concentration near the source end of the channel and low impurity concentration in the rest of the channel. Besides excellent dc output characteristics and experimental characterization results on these devices show better Vth-L roll-off, low DIBL, higher breakdown voltages, and kink-free operation. Further SH SOI MOSFETs have been shown to exhibit reduced parasitic bipolar junction transistor effect in comparison to the homogeneously doped channel (conventional) SOI MOSFETs. Small-signal characterization on these devices shows higher ac transconductance, higher output resistance, and better dynamic intrinsic gain (gmRo) in comparison with the conventional homogeneously doped SOI MOSFETs. Also, the low drain junction capacitance as a result of low impurity concentration near the drain region is beneficial for improved circuit performance. The experimental results show that SH SOI MOSFETs exhibit a lower hot carrier degradation in small-signal transconductance and dynamic output resistance in comparison with conventional homogeneously doped SOI MOSFETs. From 2-D device simulations, the lower hot carrier degradation mechanism in SH SOI MOSFETs is analyzed and compared with the conventional SOI MOSFETs.
URI: http://dx.doi.org/10.1109/TDMR.2005.843832
http://hdl.handle.net/10054/183
http://dspace.library.iitb.ac.in/xmlui/handle/10054/183
ISSN: 1530-4388
Appears in Collections:Article

Files in This Item:

File Description SizeFormat
1435396.pdf393 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback