Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/10054/153
Title: NBTI degradation and its impact for analog circuit reliability
Authors: RAMGOPAL RAO, V
JHA, NEERAJ K
REDDY, PS
SHARMA, DK
Keywords: Cmos Integrated Circuit
Comparator Circuit
Operational Amplifiers
Mosfet Devices
Issue Date: 2005
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 52(12), 2609-15
Abstract: A methodology to quantify the degradation at circuit level due to negative bias temperature instability (NBTI) has been proposed in this work. Using this approach, a variety of analog/mixed-signal circuits are simulated, and their degradation is analyzed. It has been shown that the degradation in circuit performance is mainly dependent on the circuit configuration and its application rather than the absolute value of degradation at the device level. In circuits such as digital-to-analog converters, NBTI can pose a serious reliability concern, as even a small variation in bias currents can cause significant gain errors.
URI: http://dx.doi.org/10.1109/TED.2005.859570
http://hdl.handle.net/10054/153
http://dspace.library.iitb.ac.in/xmlui/handle/10054/153
ISSN: 0018-9383
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