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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/149

Title: Impact of lateral asymmetric channel doping on deep submicrometer mixed-signal device and circuit performance
Authors: SHARMA, DK
NARASIMHULU, K
RAMGOPAL RAO, V
Keywords: transistors
optimization
electric inverters
integrated circuits
Issue Date: 2003
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 50(12), 2481-89
Abstract: In this paper, we have systematically investigated the effect of scaling on analog performance parameters in lateral asymmetric channel (LAC) MOSFETs and compared their performance with conventional (CON) MOSFETs for mixed-signal applications. Our results show that, in LAC MOSFETs, there is significant improvement in the intrinsic device performance for analog applications (such as device gain, gm/ID etc.) down to the 70-nm technology node, in addition to an improvement in drive current and other parameters over a wide range of channel lengths. A systematic comparison on the performance of amplifiers and CMOS inverters with CON and LAC MOSFETs is also performed. The tradeoff between power dissipation and device performance is explored with detailed circuit simulations for both CON and LAC MOSFETs.
URI: http://dx.doi.org/10.1109/TED.2003.820120
http://hdl.handle.net/10054/149
http://dspace.library.iitb.ac.in/xmlui/handle/10054/149
ISSN: 0018-9383
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