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| Title: | Optimization and realization of sub-100-nm channel length single halo p-MOSFETs |
| Authors: | RAMGOPAL RAO, V
BORSE, DG
MANJULA RANI, KN
JHA, NEERAJ K
CHANDORKAR, AN
VASI, J
CHENG, B
WOO, JCS |
| Keywords: | mosfet
hot carriers
ion implantation
semiconductor device reliability
semiconductor doping |
| Issue Date: | 2002 |
| Publisher: | IEEE |
| Citation: | IEEE Transactions on Electron Devices 49(6), 1077-79 |
| Abstract: | Single halo p-MOSFETs with channel lengths down to 100 nm are optimized, fabricated, and characterized as part of this study. We show extensive device characterization results to study the effect of large angle VT adjust implant parameters on device performance and hot carrier reliability. Results on both conventionally doped and single halo p-MOSFETs have been presented for comparison purposes. |
| URI: | http://dx.doi.org/10.1109/TED.2002.1003752
http://hdl.handle.net/10054/148
http://dspace.library.iitb.ac.in/xmlui/handle/10054/148 |
| ISSN: | 0018-9383 |
| Appears in Collections: | Article
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