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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/1477

Title: Microstructural dependence of electrical transport in bulk CuxGe1−x alloys
Authors: VITTA, SATISH
TANTRI, SHRIKARI P
Keywords: crystalline materials
microstructure
temperature
volume fraction
Issue Date: 1998
Publisher: Elsevier
Citation: Materials Science and Engineering B 52(2-3), 185-188
Abstract: The electrical transport behavior in bulk processed Cu78.8Ge21.2 and Cu77.4Ge22.6 alloys has been studied as a function of temperature. The room temperature resistivity of the alloy with 21.2 at.% Ge was found to be 4.9 μΩ cm, an order of magnitude lower compared to the resistivity of the 22.6 at.% Ge alloy. The resistivity of both the alloys is different compared to thin films of equivalent composition which were prepared by a high temperature solid state reaction process. The difference in behavior is found to be due to the microstructure, volume fraction and morphology of the different phases, which depends on the actual method of processing the material.
URI: 10.1016/S0921-5107(97)00275-4
http://hdl.handle.net/10054/1477
http://dspace.library.iitb.ac.in/xmlui/handle/10054/1477
ISSN: 0921-5107
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