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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/146

Title: High-field stressing of LPCVD gate oxides
Authors: RAMGOPAL RAO, V
EISELE, I
PATRIKAR, RM
SHARMA, DK
GRABOLLA, T
VASI, J
Keywords: dielectric thin films
electron traps
high field effects
hot carriers
interface states
semiconductor-insulator boundaries
Issue Date: 1997
Publisher: IEEE
Citation: IEEE Electron Device Letters 18(3), 84-86
Abstract: We have investigated gate oxide degradation as a function of high-field constant current stress for two types of oxides, viz. standard dry and LPCVD oxides. Charge injection was done from both electrodes, the gate and the substrate. Our results indicate that compared to dry oxides, LPCVD oxides show reduced charge trapping and interface state generation for inversion stress. The degradation in LPCVD oxides with constant current stress has been explained by the hydrogen model.
URI: http://dx.doi.org/10.1109/55.556088
http://hdl.handle.net/10054/146
http://dspace.library.iitb.ac.in/xmlui/handle/10054/146
ISSN: 0741-3106
Appears in Collections:Article

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