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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/145

Title: Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics
Authors: RAMGOPAL RAO, V
SHARMA, DK
VASI, J
Keywords: mos capacitors
dielectric thin films
electron traps
nitridation
oxidation
radiation effects
Issue Date: 1996
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 43(9), 1467-70
Abstract: In this study we report for the first time results on neutral electron trap generation in reoxidised nitrided oxide dielectrics under various radiation doses and bias conditions and compare the results with the conventional oxides. We see very little electron trap creation in RNO dielectrics for radiation doses up to 5 Mrad (Si) and for bias fields up to ±2.5 MV/cm. We explain our results in RNO and oxide dielectrics using a three step defect creation model.
URI: http://dx.doi.org/10.1109/16.535335
http://hdl.handle.net/10054/145
http://dspace.library.iitb.ac.in/xmlui/handle/10054/145
ISSN: 0018-9383
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