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Title: Modeling of the CoolMOSTM transistor - Part II: DC model and parameter extraction
Authors: PATIL, MB
Keywords: Spice
Parameter Estimation
Power Mosfet
Semiconductor Device Models
Issue Date: 2002
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 49(5), 923-29
Abstract: An accurate dc model for the CoolMOSTM power transistor is presented. An elementary model consisting of an intrinsic MOSFET and a JFET to represent the drift region, is first discussed and it is pointed out that this is a rather poor model, needing improvements. Using device simulation results, it is shown that, by replacing the gate and drain voltages of the intrinsic MOSFET by appropriate "effective" voltages, a highly accurate model is obtained. A systematic procedure for parameter extraction is described and an implementation of the new model in the form of a SPICE subcircuit is given.
ISSN: 0018-9383
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