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|Title:||Modeling of the CoolMOSTM transistor - Part II: DC model and parameter extraction|
Semiconductor Device Models
|Citation:||IEEE Transactions on Electron Devices 49(5), 923-29|
|Abstract:||An accurate dc model for the CoolMOSTM power transistor is presented. An elementary model consisting of an intrinsic MOSFET and a JFET to represent the drift region, is first discussed and it is pointed out that this is a rather poor model, needing improvements. Using device simulation results, it is shown that, by replacing the gate and drain voltages of the intrinsic MOSFET by appropriate "effective" voltages, a highly accurate model is obtained. A systematic procedure for parameter extraction is described and an implementation of the new model in the form of a SPICE subcircuit is given.|
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