|
DSpace at IIT Bombay >
IITB Publications >
Article >
Please use this identifier to cite or link to this item:
http://dspace.library.iitb.ac.in/jspui/handle/10054/142
|
| Title: | Modeling of the CoolMOSTM transistor - Part II: DC model and parameter extraction |
| Authors: | PATIL, MB
DANIEL, BJ
PARIKH, CD |
| Keywords: | spice
parameter estimation
power mosfet
semiconductor device models |
| Issue Date: | 2002 |
| Publisher: | IEEE |
| Citation: | IEEE Transactions on Electron Devices 49(5), 923-29 |
| Abstract: | An accurate dc model for the CoolMOSTM power transistor is presented. An elementary model consisting of an intrinsic MOSFET and a JFET to represent the drift region, is first discussed and it is pointed out that this is a rather poor model, needing improvements. Using device simulation results, it is shown that, by replacing the gate and drain voltages of the intrinsic MOSFET by appropriate "effective" voltages, a highly accurate model is obtained. A systematic procedure for parameter extraction is described and an implementation of the new model in the form of a SPICE subcircuit is given. |
| URI: | http://dx.doi.org/10.1109/16.998604
http://hdl.handle.net/10054/142
http://dspace.library.iitb.ac.in/xmlui/handle/10054/142 |
| ISSN: | 0018-9383 |
| Appears in Collections: | Article
|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
|
