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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/142

Title: Modeling of the CoolMOSTM transistor - Part II: DC model and parameter extraction
Authors: PATIL, MB
DANIEL, BJ
PARIKH, CD
Keywords: spice
parameter estimation
power mosfet
semiconductor device models
Issue Date: 2002
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 49(5), 923-29
Abstract: An accurate dc model for the CoolMOSTM power transistor is presented. An elementary model consisting of an intrinsic MOSFET and a JFET to represent the drift region, is first discussed and it is pointed out that this is a rather poor model, needing improvements. Using device simulation results, it is shown that, by replacing the gate and drain voltages of the intrinsic MOSFET by appropriate "effective" voltages, a highly accurate model is obtained. A systematic procedure for parameter extraction is described and an implementation of the new model in the form of a SPICE subcircuit is given.
URI: http://dx.doi.org/10.1109/16.998604
http://hdl.handle.net/10054/142
http://dspace.library.iitb.ac.in/xmlui/handle/10054/142
ISSN: 0018-9383
Appears in Collections:Article

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