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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/1416

Title: Highly conducting doped microcrystalline silicon (μc-Si:H) at very low substrate temperature by Cat-CVD
Authors: DUSANE, RO
DIEHL, FRANK
WEBER, U
SCHRÖDER, B
Keywords: semiconductor doping
low temperature effects
pressure effects
spectrum analysis
chemical vapor deposition
hydrogenation
Issue Date: 2001
Publisher: Elsevier
Citation: Thin Solid Films 395(1-2), 202-205
Abstract: In this paper we report the synthesis of highly conducting doped hydrogenated micro-crystalline silicon films, prepared by Cat-CVD deposition using silane and trimethyl boron (TMB) with hydrogen dilution at substrate temperatures as low as 110°C, having a conductivity of approximately 1 Ω−1 cm−1. All the films are microcrystalline and show the characteristic X-ray signature pertaining to the same. The optical transmission data also reveal a high transmission over the spectral range of 450–600 nm. The variation in film characteristics with gas pressure was also studied, and reveals that the pressure is a very important parameter in determining the microcrystallinity of the films. The hydrogen dilution was varied over the range 30–70 sccm. However, no significant effect on the room-temperature conductivity was observed over this range.
URI: 0040-6090
http://hdl.handle.net/10054/1416
http://dspace.library.iitb.ac.in/xmlui/handle/10054/1416
ISSN: 10.1016/S0040-6090(01)01273-1
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