DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Article >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/1412

Title: Revisiting the B-factor variation in a-SiC:H deposited by HWCVD
Authors: SWAIN, BIBHU P
PATIL, SAMADHAN B
KUMBHAR, ALKA A
DUSANE, RO
Keywords: carbon
chemical vapor deposition
optical properties
film preparation
substrates
Issue Date: 2003
Publisher: Elsevier
Citation: Thin Solid Films 430(1-2), 186-188
Abstract: In order to understand material properties in a better way, it is always desirable to come up with new variables that might be related to the film properties. The B-parameter is such a variable, which relates to the quality of a-SiC:H films both in terms of electronic and optical properties. B (scaling factor) is essentially the slope of the straight-line part of the (αE)1/2–E (Tauc plot). Due to dependence on a large number of parameters and no detailed research, many previous authors have surmised that B has an ambiguous correlation with carbon content. We have made an attempt to establish the relation between the B-parameter as a quality-indicating factor of a-SiC:H films in both carbon- and silicon-rich material. For this we studied a-SiC:H films deposited by the HWCVD method with broad deposition parameters of substrate temperature (Ts), filament temperature (TF) and C2H2 fraction. Our results indicate that the B-parameter varies considerably with process conditions such as TF, total gas pressure and carbon content. An attempt is made to correl
URI: 10.1016/S0040-6090(03)00107-X
http://hdl.handle.net/10054/1412
http://dspace.library.iitb.ac.in/xmlui/handle/10054/1412
ISSN: 0040-6090
Appears in Collections:Article

Files in This Item:

File Description SizeFormat
5548-6.pdf70.62 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback