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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/1410

Title: Enhancement of moisture resistance of spin-on low-k HSQ films by hot wire generated atomic hydrogen treatment
Authors: KUMBHAR, ALKA A
SINGH, SUNIL KUMAR
DUSANE, RO
Keywords: absorption
hydrogen
leakage currents
moisture
vlsi circuits
Issue Date: 2006
Publisher: Elsevier
Citation: Thin Solid Films 501(1-2), 329-331
Abstract: Spin on hydrogen silsesquioxane (HSQ) is a material with low dielectric constant (k) and shows potential as intermetal dielectric (IMD) layers for future VLSI circuits. One major challenge in the integration of these films is the moisture uptake with time, which degrades the electrical performance and hence limits their application. In the present work, we show (under accelerated conditions) that the as deposited films absorb moisture significantly which is reflected in the related signatures in the infrared (IR) spectroscopic data. Subsequently there is an increase in the leakage current with a concurrent decrease in the electrical breakdown field. Upon treatment with atomic hydrogen generated by a hot filament (TF = 1900 °C), drastic reduction in the moisture absorption is observed. Also there is almost a 2 orders of magnitude reduction in the leakage current and no indication of any electrical breakdown within the range of applied field.
URI: 10.1016/j.tsf.2005.07.214
http://hdl.handle.net/10054/1410
http://dspace.library.iitb.ac.in/xmlui/handle/10054/1410
ISSN: 0040-6090
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