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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/141

Title: On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress
Authors: MAHAPATRA, S
SAHA, D
VARGHESE, D
BHARATH KUMAR, P
Keywords: gates (transistor)
ionization
thermodynamic stability
mathematical models
stress analysis
Issue Date: 2006
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 53(7), 1583-92
Abstract: A common framework for interface-trap (NIT) generation involving broken ≡Si-H and ≡Si-O bonds is developed for negative bias temperature instability (NBTI), Fowler-Nordheim (FN), and hot-carrier injection (HCI) stress. Holes (from inversion layer for pMOSFET NBTI, from channel due to impact ionization, and from gate poly due to anode-hole injection or valence-band hole tunneling for nMOSFET HCI) break ≡Si-H bonds, whose time evolution is governed by either one-dimensional (NBTI or FN) or two-dimensional (HCI) reaction-diffusion models. Hot holes break ≡Si-O bonds during both FN and HCI stress. Power-law time exponent of NIT during stress and recovery of NIT after stress are governed by relative contribution of broken ≡Si-H and ≡Si-O bonds (determined by cold- and hot-hole densities) and have important implications for lifetime prediction under NBTI, FN, and HCI stress conditions.
URI: http://dx.doi.org/10.1109/TED.2006.876041
http://hdl.handle.net/10054/141
http://dspace.library.iitb.ac.in/xmlui/handle/10054/141
ISSN: 0018-9383
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