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Title: A new approach to model nonquasi-static (NQS) effects for MOSFETs - Part I: large-signal analysis
Authors: ROY, AS
Keywords: Galerkin Method
Inversion Layers
Semiconductor Device Models
Variational Techniques
Issue Date: 2003
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 50(12), 2393-2400
Abstract: This paper presents a new nonquasi-static (NQS) model for the MOSFET. The model is derived from physics and only relies on the very basic approximation needed for a charge-based model. To derive the model, a popular variational technique named Galerkin's Method has been used. The model proves to be very accurate even for extremely fast changes in the bias voltages. Simulation results show a very good match even when the rise time of the applied signal is smaller than the transit time of the device.
ISSN: 0018-9383
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