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| Title: | A new approach to model nonquasi-static (NQS) effects for MOSFETs - Part I: large-signal analysis |
| Authors: | ROY, AS
VASI, J
PATIL, MB |
| Keywords: | galerkin method
mosfet
inversion layers
semiconductor device models
variational techniques |
| Issue Date: | 2003 |
| Publisher: | IEEE |
| Citation: | IEEE Transactions on Electron Devices 50(12), 2393-2400 |
| Abstract: | This paper presents a new nonquasi-static (NQS) model for the MOSFET. The model is derived from physics and only relies on the very basic approximation needed for a charge-based model. To derive the model, a popular variational technique named Galerkin's Method has been used. The model proves to be very accurate even for extremely fast changes in the bias voltages. Simulation results show a very good match even when the rise time of the applied signal is smaller than the transit time of the device. |
| URI: | http://dx.doi.org/10.1109/TED.2003.819053
http://hdl.handle.net/10054/140
http://dspace.library.iitb.ac.in/xmlui/handle/10054/140 |
| ISSN: | 0018-9383 |
| Appears in Collections: | Article
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