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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/140

Title: A new approach to model nonquasi-static (NQS) effects for MOSFETs - Part I: large-signal analysis
Authors: ROY, AS
VASI, J
PATIL, MB
Keywords: galerkin method
mosfet
inversion layers
semiconductor device models
variational techniques
Issue Date: 2003
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 50(12), 2393-2400
Abstract: This paper presents a new nonquasi-static (NQS) model for the MOSFET. The model is derived from physics and only relies on the very basic approximation needed for a charge-based model. To derive the model, a popular variational technique named Galerkin's Method has been used. The model proves to be very accurate even for extremely fast changes in the bias voltages. Simulation results show a very good match even when the rise time of the applied signal is smaller than the transit time of the device.
URI: http://dx.doi.org/10.1109/TED.2003.819053
http://hdl.handle.net/10054/140
http://dspace.library.iitb.ac.in/xmlui/handle/10054/140
ISSN: 0018-9383
Appears in Collections:Article

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