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|Title:||A new approach to model nonquasi-static (NQS) effects for MOSFETs - Part I: large-signal analysis|
Semiconductor Device Models
|Citation:||IEEE Transactions on Electron Devices 50(12), 2393-2400|
|Abstract:||This paper presents a new nonquasi-static (NQS) model for the MOSFET. The model is derived from physics and only relies on the very basic approximation needed for a charge-based model. To derive the model, a popular variational technique named Galerkin's Method has been used. The model proves to be very accurate even for extremely fast changes in the bias voltages. Simulation results show a very good match even when the rise time of the applied signal is smaller than the transit time of the device.|
|Appears in Collections:||Article|
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